Product Summary

The MW6S004NT1 is an N-Channel Enhancement-Mode Lateral MOSFET designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. The MW6S004NT1 is suitable for analog and digital modulation and multicarrier amplifier applications.

Parametrics

MW6S004NT1 absolute maximum ratings: (1)Drain-Source Voltage VDSS: -0.5, +68 Vdc; (2)Gate-Source Voltage VGS: -0.5, +12 Vdc; (3)Storage Temperature Range Tstg: - 65 to +150 ℃; (4)Operating Junction Temperature TJ: 150 ℃.

Features

MW6S004NT1 features: (1)Characterized with Series Equivalent Large-Signal Impedance Parameters; (2)On-Chip RF Feedback for Broadband Stability; (3)Integrated ESD Protection; (4)RoHS Compliant; (5)In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.

Diagrams

MW6S004NT1 Test Circuit Schematic

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MW6S004NT1
MW6S004NT1
Freescale Semiconductor
Transistors RF MOSFET Power HV6 1950MHZ 2W PLD1.5N
Data Sheet
0-1: $5.83
1-25: $5.48
25-100: $5.24
100-500: $4.67
500-1000: $3.11
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MW6S004NT1
MW6S004NT1
Freescale Semiconductor
Transistors RF MOSFET Power HV6 1950MHZ 2W PLD1.5N
Data Sheet
0-1: $5.83
1-25: $5.48
25-100: $5.24
100-500: $4.67
500-1000: $3.11
MW6S010GNR1
MW6S010GNR1
Freescale Semiconductor
Transistors RF MOSFET Power HV6 900MHZ 10W
Data Sheet
0-386: $5.24
386-500: $5.24
MW6S010MR1
MW6S010MR1

MOSFET RF N-CH 28V 10W TO-270-2
Data Sheet
Negotiable 
MW6S010NR1
MW6S010NR1
Freescale Semiconductor
Transistors RF MOSFET Power HV6 900MHZ 10W TO270-2N
Data Sheet
0-1: $7.89
1-25: $7.58
25-50: $7.28
50-100: $6.68
MW6S010GMR1
MW6S010GMR1

MOSFET RF N-CH 28V 10W TO270-2GW
Data Sheet
Negotiable