Product Summary

The MW6S010NR1 is a RF power field effect transistor designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. The MW6S010NR1 is suitable for analog and digital modulation and multicarrier amplifier applications.

Parametrics

MW6S010NR1 absolute maximum ratings: (1)Drain-Source Voltage VDSS: -0.5, +68 Vdc; (2)Gate-Source Voltage VGS: -0.5, +12 Vdc; (3)Storage Temperature Range Tstg: - 65 to +150 ℃; (4)Case Operating Temperature TC: 150 ℃; (5)Operating Junction Temperature (1,2) TJ: 225 ℃.

Features

MW6S010NR1 features: (1)Characterized with Series Equivalent Large-Signal Impedance Parameters; (2)On-Chip RF Feedback for Broadband Stability; (3)Qualified Up to a Maximum of 32 VDD Operation; (4)Integrated ESD Protection; (5)225℃ Capable Plastic Package; (6)RoHS Compliant; (7)In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.

Diagrams

MW6S010NR1 test circuit

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MW6S010NR1
MW6S010NR1
Freescale Semiconductor
Transistors RF MOSFET Power HV6 900MHZ 10W TO270-2N
Data Sheet
0-1: $7.89
1-25: $7.58
25-50: $7.28
50-100: $6.68
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(USD)		 Quantity
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Data Sheet
0-1: $5.83
1-25: $5.48
25-100: $5.24
100-500: $4.67
500-1000: $3.11
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Data Sheet
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MW6S010GNR1
Freescale Semiconductor
Transistors RF MOSFET Power HV6 900MHZ 10W
Data Sheet
0-386: $5.24
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MW6S010MR1
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MOSFET RF N-CH 28V 10W TO-270-2
Data Sheet
Negotiable 
MW6S010NR1
MW6S010NR1
Freescale Semiconductor
Transistors RF MOSFET Power HV6 900MHZ 10W TO270-2N
Data Sheet
0-1: $7.89
1-25: $7.58
25-50: $7.28
50-100: $6.68