Product Summary

The MRF8S9200NR3 is a RF Power field effect transistor designed for CDMA base station applications with frequencies from 920 to 960 MHz. MRF8S9200NR3 can be used in Class AB and Class C for all typical cellular base station modulation formats.

Parametrics

MRF8S9200NR3 absolute maximum ratings: (1)Drain--Source Voltage VDSS: -0.5 to +70 Vdc; (2)Gate-Source Voltage VGS: -6.0 to +10 Vdc; (3)Operating Voltage VDD: 32 to +0 Vdc; (4)Storage Temperature Range Tstg: -65 to +150 ℃; (5)Case Operating Temperature TC: 150 ℃; (6)Operating Junction Temperature (1,2) TJ: 225 ℃.

Features

MRF8S9200NR3 features: (1)Integrated ESD Protection; (2)Designed for Digital Predistortion Error Correction Systems; (3)100% PAR Tested for Guaranteed Output Power Capability; (4)Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters; (5)Optimized for Doherty Applications; (6)RoHS Compliant; (7)In Tape and ReelR1 Suffix = 500 Units per 32 mm, 13 inch Reel.

Diagrams

MRF8S9200NR3 Test Circuit

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