(Hong Kong)
Product Summary
The MRF6S27015GNR1 is an N-Channel Enhancement-Mode Lateral MOSFET. It is designed for CDMA base station applications with frequencies from 2000 to 2700 MHz. The MRF6S27015GNR1 is suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications.
Parametrics
MRF6S27015GNR1 absolute maximum ratings: (1)Drain-Source Voltage, VDSS: -0.5, +68 Vdc; (2)Gate-Source Voltage, VGS: -0.5, +12 Vdc; (3)Storage Temperature Range, Tstg: -65 to +150℃; (4)Case Operating Temperature, TC: 150℃; (5)Operating Junction Temperature, TJ: 225℃.
Features
MRF6S27015GNR1 features: (1)Characterized with Series Equivalent Large-Signal Impedance Parameters; (2)Internally Matched for Ease of Use; (3)Qualified Up to a Maximum of 32 VDD Operation; (4)Integrated ESD Protection; (5)225℃ Capable Plastic Package; (6)RoHS Compliant; (7)In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
Diagrams
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 MRF6S27015GNR1 |
Freescale Semiconductor |
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