MRF8P23080HSR3

2.3GHZ, 28V, MRF8P23080HSR3, -0.5 to +65 Vdc, 168W, Freescale

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Price:: US $48.00~59.00 / piece [Get Latest Price]

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	US $48.00~59.00

PartNumber:: MRF8P23080HSR3

Brand:: Freescale Semiconductor, Inc - Freescale | Pack: DIP | D/C: 11+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2012-01-16

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Part Number:MRF8P23080HSR3
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Product Summary

The MRF8P23080HSR3 is an N-Channel Enhancement-Mode Lateral MOSFET which is designed for W-CDMA and LTE base station applications with frequencies from 2300 to 2620 MHz. The MRF8P23080HSR3 can be used in Class AB and Class C for all typical cellular base station modulation formats.

Parametrics

MRF8P23080HSR3 absolute maximum ratings: (1)Drain-Source Voltage VDSS: -0.5 to +65 Vdc; (2)Gate-Source Voltage VGS: -6.0 to +10 Vdc; (3)Operating Voltage VDD: 32, +0 Vdc; (4)Storage Temperature Range Tstg: -65 to +150 ℃; (5)Case Operating Temperature TC: 150 ℃; (6)Operating Junction Temperature (1,2) TJ: 225 ℃; (7)CW Operation @ TC = 25℃: 168W.

Features

MRF8P23080HSR3 features: (1)Production Tested in a Symmetrical Doherty Configuration; (2)100% PAR Tested for Guaranteed Output Power Capability; (3)Characterized with Large--Signal Load--Pull Parameters and Common Source S-Parameters; (4)Internally Matched for Ease of Use; (5)Integrated ESD Protection; (6)Greater Negative Gate--Source Voltage Range for Improved Class C Operation; (7)Designed for Digital Predistortion Error Correction Systems; (8)RoHS Compliant; (9)NI--780--4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel; (10)NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel.