(Hong Kong)
Product Summary
The MRFE6S9125NR1 is an N-Channel Enhancement-Mode Lateral MOSFET designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of the MRFE6S9125NR1 make it ideal for large-signal, common-source amplifier applications in 28 volt base station equipment.
Parametrics
MRFE6S9125NR1 absolute maximum ratings: (1)Drain-Source Voltage VDSS: -0.5, +66 Vdc; (2)Gate-Source Voltage VGS: -0.5, +12 Vdc; (3)Maximum Operation Voltage VDD: 32, +0 Vdc; (4)Storage Temperature Range Tstg: - 65 to +150 ℃; (5)Case Operating Temperature TC: 150 ℃; (6)Operating Junction Temperature (1,2) TJ: 225 ℃.
Features
MRFE6S9125NR1 features: (1)Characterized with Series Equivalent Large-Signal Impedance Parameters; (2)Internally Matched for Ease of Use; (3)Integrated ESD Protection; (4)225℃ Capable Plastic Package; (5)RoHS Compliant; (6)In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Diagrams
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 MRFE6S9125NR1 |
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