(Hong Kong)
Product Summary
The MRF8S18120HSR3 is an N-Channel Enhancement-Mode Lateral MOSFET which is designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880MHz. The MRF8P20140WHSR3 can be used in Class AB and Class C for all typical cellular base station modulation formats.
Parametrics
MRF8S18120HSR3 absolute maximum ratings: (1)Drain-Source Voltage VDSS: -0.5 to +65 Vdc; (2)Gate-Source Voltage VGS: -6.0 to +10 Vdc; (3)Operating Voltage VDD: 32 to +0 Vdc; (4)Storage Temperature Range Tstg: - 65 to +150 ℃; (5)Case Operating Temperature TC: 150 ℃; (6)Operating Junction Temperature (1,2) TJ: 225 ℃.
Features
MRF8S18120HSR3 features: (1)Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters; (2)Internally Matched for Ease of Use; (3)Integrated ESD Protection; (4)Greater Negative Gate-Source Voltage Range for Improved Class C Operation; (5)Optimized for Doherty Applications; (6)RoHS Compliant.
Diagrams
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 MRF8S18120HSR3 |
Freescale Semiconductor |
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