(Hong Kong)
Product Summary
The SXA389BZ amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. The SXA389BZ amplifier is specially designed for use as driver devices for infrastructure equipment in the 400 MHz to 2500 MHz cellular, ISM, WLL, PCS, WCDMA applications. Its high linearity makes SXA389BZ an ideal choice for multi-carrier as well as digital applications.
Parametrics
SXA389BZ absolute maximum ratings: (1)Max Device Current (lD): 240 mA; (2)Max Device Voltage (VCC): 6 V; (3)Max RF Input Power: 100 mW; (4)Max Dissipated Power: 1500 mW; (5)Max Junction Temperature (TJ): 165 ℃; (6)Operating Temperature Range (TL): -40 to + 85 ℃; (7)Max Storage Temperature: 150 ℃.
Features
SXA389BZ features: (1)Available in RFMD Green, RoHS Compliant, and Pb-Free (Z Part Number); (2)Lower RTH for increased MTTF 108 Hours at TLead=85C; (3)On-Chip Active Bias Control, Single 5V Supply; (4)Excellent Linearity:+43dBm Typ OIP3 at 1960MHz; (5)High P1dB :+25dBm Typ; (6)High Gain:+18.5dB at 850MHz; (7)Efficient: Consumes Only 575mW.
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