(Hong Kong)
Product Summary
The MRF9060LR1 is a RF Power field effect transistor designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of the device makes MRF9060LR1 ideal for large- signal, common-source amplifier applications in 26 volt base station equipment.
Parametrics
MRF9060LR1 absolute maximum ratings: (1)Drain-Source Voltage, VDSS: - 0.5, +65 Vdc; (2)Gate-Source Voltage, VGS: - 0.5, +15 Vdc; (3)Total Device Dissipation @ TC = 25℃, PD: 159W(MRF9060LR1); (4)Total Device Dissipation Derate above 25℃: 0.91 W/℃(MRF9060LR1); (5)Total Device Dissipation @ TC = 25℃, PD: 219W(MRF9060LSR1); (6)Total Device Dissipation Derate above 25℃: 1.25 W/℃(MRF9060LSR1); (7)Storage Temperature Range, Tstg: - 65 to +150 ℃; (8)Case Operating Temperature, TC: 150 ℃; (9)Operating Junction Temperature, TJ: 200 ℃.
Features
MRF9060LR1 features: (1)Integrated ESD Protection; (2)Designed for Maximum Gain and Insertion Phase Flatness; (3)Excellent Thermal Stability; (4)Characterized with Series Equivalent Large-Signal Impedance Parameters; (5)Low Gold Plating Thickness on LeadsL Suffix Indicates 40u Nominal; (6)RoHS Compliant; (7)In Tape and ReelR1 Suffix = 500 Units per 32 mm, 13 inch Reel.
Diagrams
| Image | Part No | Mfg | Description |  |
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 MRF9060LR1 |
Freescale Semiconductor |
Transistors RF MOSFET Power 60W 1GHZ RFPWR FET NI360 |
Data Sheet |
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