(Hong Kong)
Product Summary
The MRF8P20161HSR3 is a RF power field effect transistor.
Parametrics
MRF8P20161HSR3 absolute maximum ratings: (1)Drain--Source Voltage VDSS: -0.5 to +65 Vdc; (2)Gate--Source Voltage VGS: -6.0 to +10 Vdc; (3)Operating Voltage VDD: 32, +0 Vdc; (4)Storage Temperature Range Tstg: -65 to +150 ℃; (5)Case Operating Temperature TC: 150 ℃; (6)Operating Junction Temperature (2,3) TJ: 225 ℃; (7)CW Operation @ TC = 25℃, CW: 206W.
Features
MRF8P20161HSR3 features: (1)Production Tested in a Symmetrical Doherty Configuration; (2)100% PAR Tested for Guaranteed Output Power Capability; (3)Characterized with Large--Signal Load--Pull Parameters and Common Source S--Parameters; (4)Internally Matched for Ease of Use; (5)Integrated ESD Protection; (6)Greater Negative Gate--Source Voltage Range for Improved Class C Operation; (7)Designed for Digital Predistortion Error Correction Systems; (8)RoHS Compliant; (9)In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel.
Diagrams
| Image | Part No | Mfg | Description |  |
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 MRF8P20161HSR3 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV8 2GHZ 161W NI780HS-4 |
Data Sheet |
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