(Hong Kong)
Product Summary
The MRF6S20010GNR1 is an N-Channel Enhancement-Mode Lateral MOSFET which is designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. The MRF6S20010GNR1 is suitable for analog and digital modulation and multipurpose amplifier applications.
Parametrics
MRF6S20010GNR1 absolute maximum ratings: (1)Drain-Source Voltage VDSS: -0.5, +68 Vdc; (2)Gate-Source Voltage VGS: -0.5, +12 Vdc; (3)Storage Temperature Range Tstg: -65 to +150 ℃; (4)Case Operating Temperature TC: 150 ℃; (5)Operating Junction Temperature (1,2) TJ: 225 ℃.
Features
MRF6S20010GNR1 features: (1)Characterized with Series Equivalent Large-Signal Impedance Parameters; (2)Internally Matched for Ease of Use; (3)Qualified Up to a Maximum of 32 VDD Operation; (4)Integrated ESD Protection; (5)225℃ Capable Plastic Package; (6)RoHS Compliant; (7)In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 MRF6S20010GNR1 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV6 2GHZ 10W |
Data Sheet |
|
|
||||||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||
|
MRF607 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||
|
MRF616 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||
|
MRF627 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||
|
MRF630 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||
|
MRF6414 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||
|
MRF650 |
TriQuint Semiconductor |
RF Amplifier RF Bipolar Trans |
Data Sheet |
Negotiable |
|
||||||||
